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Power semiconductor

GaN + SiC device

  Main characteristics Applying Effect
GaN / SiC material properties
  • Energy band difference 3 times compared to Si
  • Material resistant to heat
  • Next-generation power device materials
  • Energy band difference 3 times compared to Si
  • Material resistant to heat
  • Next-generation power device materials
GaN+SiC Power device characteristics
  • Si contrast
    • Resistance 1/10
    • Switching characteristics 100 times
  • Si contrast
    • Resistance 1/10
    • Switching characteristics 100 times
RFsemi Power Package
  • Built-in multilayer heatsink
    • VSHS* Package
  • Chimney effect heat dissipation structure
  • Securing original patent
  • Built-in multilayer heatsink
    • VSHS* Package
  • Chimney effect heat dissipation structure
  • Securing original patent

VSHS* : Variable Stack Heat Sink Package

- RFsemi Securing original patent

- Stacked Heat Sink Package

  • Chimney effect heat dissipation(VSHS)

  • VSHS Power package

GaN+SiC Modular Power Device

It consists of RFsemi's modular power devices using GaN and SiC. It has the following characteristics by utilizing the 'laminated heat sink package' applied for a patent as an independent technology.

1. Realization of miniaturization and high efficiency through world-class heat dissipation characteristics
2. High-speed switching through low-resistance/low-inductance implementation

GaN Power device GaN Power device + Gate protection circuit GaN Power device + Gate protection circuit + Boost SiC SBD

GaN Power device product line

Part Number. Configuration VDS (V) RDS_ON (mW) QG (nC) ID (A) Status
RP10G73A Single E GaN 100 73 0.7 1.7 Developing
RP10G30A Single E GaN 100 30 1.6 6 Developing
RP10G15A Single E GaN 100 15 3.5 8 Developing
RP10G7A Single E GaN 100 7 6 16 Development Completed
RP10G4A Single E GaN 100 4 10.5 60 Developing
RP65G450A Single E GaN 650 450 0.8 4 Developing
RP65G200A Single E GaN 650 200 1.6 8 Developing
RG65G150A Single E GaN 650 150 2.2 11 Development Completed
RP65G100A Single E GaN 650 100 3.3 15 Developing
RP65G67A Single E GaN 650 67 4.5 22 Developing
Variable Stacked Heat Sink Package
HS0 HS1 HS2 HS3
HS0 HS1 HS2 HS3
8X8X1.7 (mm) 8X8X2.7 (mm) 8X8X4.4 (mm) 8X8X6.1 (mm)

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